Continuous report I

Abstract:

Report for year 2007 presents first results of ESA PECS project “Novel X-ray Optics Technologies for ESA X-ray Astrophysics Missions”. Tasks of the first year were accomplished. First preliminary results were published in scientific journals and presented at international workshops and conferences.  

Short report:

First tasks of ESA PECS project “Novel X-ray Optics Technologies for ESA X-ray Astrophysics Missions” started in 2008. Few different parts were solved in this year. 

First task was administration part. It was specific part including study of the relevant project documentation. Project Kick-Off Meeting was held in Reflex s.r.o. (Prague, Czech Republic, May 2007) with 16 participants from 6 institutions. Tasks allocated within the project were in detail discussed and teams were established for each task and/or subproject.

Survey of different Si forming technologies was done. Four different techniques for Si wafer substrate forming have been identified and discussed. Mechanical properties of standard Si wafers (On Semiconductor) were tested. Interesting information is Young’s modulus of elasticity and influence temperature on plastic deformation. Influence study of different reaction atmosphere at high temperature on the material of the form was performed. Contamination of the silicon surface by material of the form in different atmospheres was main experimental parameter. Moreover quality of Si wafers was studied because flatness and microroughness are extremely critical parameters for Si wafer used as a substrate for X-ray optic.

The forming of Si wafers/chips by different techniques will be running during next years and special module(s) will be prepared from formed silicon part.

Tasks of the first year were accomplished and project started second year.